Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3Thin Films Deposited by Radio Frequency Magnetron Sputtering

Pb0.99[(Zr0.6Sn0.4)0.9Ti0.1]0.98Nb0.02O₃ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a (La0.5Sr0.5)CoO₃ (LSCO)/Pt/Ti/ SiO₂ /Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of 500∘C crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at 650∘C for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately 20uC/cm² and 50 kV/cm, respectively. The reduction of the polarization after 2.2\;×\;10⁹ switching cycles was less than 10%.