The energy density crystallization threshold of amorphous GeSb films has been studied for the first time as a function of the laser pulse duration in the range from 170 fs to 8 ns. The results obtained provide evidence of the existence of enhanced crystallization upon irradiation with pulses shorter than 800 fs, which is most likely related to electronic excitation effects.
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Solı́s et al. (1996) studied this question.
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