The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, and which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of on poly-Si is implicitly related to the morphology perturbation.
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Lee et al. (2002) studied this question.
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