In2O3:H transparent conductive oxide films with high mobility and near infrared transparency for optoelectronic applications

Hydrogen doped In2O3 (In2O3:H) films show high conductivity, small dispersion of refractive index and very low extinction coefficient in the visible to near infrared wavelengths. The improved properties make this transparent conducting oxide an ideal candidate for a window electrode of optoelectronic devices. This article describes the control of microstructure of In2O3:H, the relationship between the structure and transport properties and the Si based solar cells incorporating the In2O3:H window electrode.