The temperature dependence of the direct energy gap Eg in the In1−xGaxSb alloy system has been measured from 6 to 300 K using the photovoltaic effect as a tool of study. The temperature coefficients of Eg in the alloy were related in a simple way to those of the parent binary compounds. It is shown in particular that the bowing parameter in the Eg(x) equation varied very little between 6 and 300 K.
No takes yet. Share an insight, caveat, or question.
Roth et al. (1980) studied this question.