We have investigated the structural and electrical characteristics of (BaxSr1−x)Ti1+yO3+z (BST) thin films synthesized at 650°C on Pt/SiO2/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700°C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.
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Baumann et al. (2001) studied this question.
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