Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition

Ferroelectric SrBi2Ta2O9 thin films have been deposited on the Bi4Ti3O12 buffered Pt/Ti/SiO2/Si substrates using the metalorganic decomposition technique at annealing temperatures ranging from 600 to 750 °C. No pyrochlore phase was found in the SrBi2Ta2O9 thin films although the Bi2Ti2O7 phase appeared in the Bi4Ti3O12 buffer layers. A SrBi2Ta2O9 film with (200) predominant orientation was formed at 650 °C. The effects of the Bi4Ti3O12 buffer layer and post-annealing temperature on the structure, surface morphology, and electrical properties of SrBi2Ta2O9 thin films were analyzed.