Layered perovskite ferroelectric materials (also known as “Y-1”) allowed a quantum jump in Ferroelectric Random Access Memories (FeRAMs) due to their low operating voltages and excellent endurance properties. The ability to impose technological control in the material microstructure and overall device properties has made a major impact in the commercialization of FeRAMs. In this paper, we review our new material and integration technologies, and present the performance of “state-of-the-art” devices incorporating Y-1 FeRAMs, such as a microcontroller and an RF-ID tag. These data indicate not only the great potential of the Y-1 technology but also its maturity for the production of commercial products.
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Otsuki et al. (1997) studied this question.
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