Structure and Photoluminescence of Pure and Indium-Doped ZnTe Microstructures

High-purity and doped ZnTe microstructures were synthesized with a single thermal evaporation method. The morphology of doped ZnTe microstructures shows multilayered periodical structure, which is due to the incorporation of In elements. The PL investigation demonstrated that the pure ZnTe microstructures emit only green light (close to the bandedge) while ZnTe doped with varied In concentrations emit red or infrared light without band-edge emission. These emission changes reflected that the Donor−Acceptor pair state transition can be tuned in semiconductor microstructures for future applications.