InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior, Alian, Alireza, Merckling, Clement, Brammertz, Guy, Meuris, Marc, Heyns, Marc, Meyer, Kristin De
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Alian et al. (2012) studied this question.
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