We present the results of a high-resolution synchrotron x-ray scattering study of the lattice relaxation in an InN (0001) epitaxial layer grown on sapphire (0001) by a dc faced magnetron sputtering deposition method. X-ray powder diffraction, rocking curve, x-ray reflectivity, and atomic force microscopy surface morphology studies consistently suggest that films thinner than ∼170 Å should be highly strained, and be grown as two-dimensional epitaxial layers, in spite of the large mismatch of ∼29%. We deduced the condition for extended domain matching. The strain was relieved as the film thickness increased, while columnar seeds started to nucleate on parts of the film.
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Lee et al. (2002) studied this question.
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