The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy

Epilayers of the n -and p -type were grown. It is demonstrated that the surface relief of the p -type layers is inferior to that of n -type layers. However, in both cases, the photoluminescence spectra and charge carrier mobility have no considerable distinctions from these characteristics for single-crystal samples. Planar p-n junctions were obtained, and diodes were fabricated as well. Depending on the layer structure, the current-voltage characteristics for devices take a form typical of conventional or inverted diodes.