A Pulse Method for Measurement of Hall Coefficient at Low Temperatures: Some Results on Indium Antimonide

A pulse method has been developed for the measurement of Hall coefficients in high resistivity semiconductors. This technique is specially useful at low temperatures since it greatly reduces heating of the specimens. Measurements have been made over the range 90°K-1.4°K on several p-type indium antimonide samples of different impurity concentration. From the variation of Hall coefficient with temperature the energy gap between the impurity levels and the valence band has been estimated. The results are consistent with the empirical formula of Pearson and Bardeen (1949) connecting the energy gap with impurity concentration in p-type silicon.