We show that antiphase-domain-free InP can be grown by means of low-pressure metalorganic-vapor-phase epitaxy (LP-MOVPE) on exactly (100)-oriented Si by appropriate choice of growth parameters. A simple detection scheme for antiphase domains (APD) in InP is presented. The most likely reason for the absence of APDs on the InP surface is their annihilation during the growth.
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Tang et al. (1992) studied this question.
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