A 176‐190 GHz transmitter module using indium phosphide and gallium arsenide MMICs

This paper describes a double‐sideband, upconverting transmitter module with a potential application to future‐generation point‐to‐point telecommunications in the 176–190‐GHz band. The multichip module incorporates indium phosphide (InP) and gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs). It is believed that this is the first time an all‐MMIC transmitter module has been reported in this frequency band. The small‐signal up‐conversion gain falls approximately monotonically from 0 dB for output at 176 GHz, to −15 dB for output at 190 GHz. The input frequency range covers 0.5 to 9 GHz and the local oscillator can be tuned from 45 to 47 GHz. Gain compression of 1‐dB occurs at an output power of −12 dBm at 176 GHz, decreasing to −20 dBm at 190 GHz. Output 3rd‐order intercept point is +1 dBm at 176 GHz, decreasing to −12 dBm at 190 GHz.