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All-epitaxial InAlGaAs-InP vertical-cavity surface-emitting lasers grown by metal-organic chemical vapor deposition were successfully demonstrated in the wavelength ranging from 1.3 to 1.6 mum. The devices showed the high performances such as single-mode output power of higher than 1.1mW, sidemode suppression ratio of 37 dB, divergence angle of 9deg, and CW operation of temperature up to 80 degC. We achieved the modulation bandwidth exceeding 2.5 Gb/s and power penalty free transmission over 30 km
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Park et al. (2006) studied this question.
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