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June 1, 2001Journal of Applied Physics

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

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MHMantu K. HudaitVirginia TechSKS. B. KrupanidhiIndian Institute of Science Bangalore

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Hudait et al. (2001) studied this question.

synapsesocial.com/papers/6a9ff0ab6e77178a3bd55e01https://doi.org/10.1063/1.1368870
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  1. 1Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions1999 · 18 citations