A comparison of in situ arsenic doping of epitaxial silicon films deposited at 800 °C by both very low pressure chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) is presented. The growth rate and morphology of films deposited by CVD are degraded in the presence of arsine. PECVD growth rates are insensitive to arsine. Moreover, PECVD deposits show an order of magnitude increase in active dopant incorporation and exhibit superior morphology relative to CVD.
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Comfort et al. (1987) studied this question.
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