Heteroepitaxy of InP on Si Substrates by MOCVD

This paper examines the growth of InP epilayers on Si substrates that have GaAs intermediate layers. To improve InP crystalline quality, the GaAs intermediate layer thickness is optimized and four‐thermal‐cycle annealing is performed after GaAs and/or InP growth. The InP epilayers have a higher crystalline quality than InP epilayers grown directly on Si. When the InP epilayer thickness is 6 μm, the x‐ray full width at half‐maximum is 250 arcseconds and the etch pit density is 3 × 10 7 cm − 2 .