Using GaAs-on-InP heteroepitaxial technology, a long wavelength transmitter OEIC was fabricated, in which a GaInAsP/InP laser was monolithically integrated with a GaAs MESFET. A direct modulation of 5Gb/s NRZ is demonstrated on this OEIC. This is the highest bit rate for GaAs-on-InP OEICs and is comparable to the best result ever reported on OEICs in general.
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Lo et al. (1989) studied this question.
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