Multiple twinning in GaAs epitaxial layers grown on Si(001) and Si(111)

Multiple twinning in GaAs epitaxial layers grown on Si by metalorganic vapor phase epitaxy has been studied by transmission electron microscopy. The primary and multiple twin reflections in the diffraction patterns were indexed in terms of matrix indices for the electron beam parallel to the 〈001〉, 〈110〉, and 〈111〉 directions in GaAs.