High-quality InGaAs/InP multiquantum-wellstructures on Si fabricated by direct bonding

High-quality InGaAs/InP multiquantum-well (MQW) structures have been successfully fabricated on Si substrates by direct bonding. These structures were first grown on InP substrates, then bonded at 700 °C on to Si substrates with buffer layers. The etch-pit densities of the InP surfaces are significantly low, ~104cm-2, the lowest values ever reported. Furthermore, strong relative photoluminescence intensity from the MQW structures, over 70% of that before bonding, is obtained.