A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3 × 10-6 Ωcm2.
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Arzberger et al. (2000) studied this question.
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