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Titanium nitride (TiN) films are grown on Ti-6 Al-4 V substrates with a cw CO₂ laser and precursor gas mixtures of TiCl₄, H₂, and N₂. In situ diagnostic techniques are applied to study the kinetics of this laser chemical-vapor deposition process. An empirical relationship between the growth rate and reactant partial pressures, the rate-controlling steps, and activation energy is determined.
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Chen et al. (1995) studied this question.
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