TiN films have been deposited on Ti-6Al-4V substrates by a cw CO2 laser chemical vapor deposition process with TiCl4, H2, and N2. Pulsed dye laser induced fluorescence spectroscopy is used to obtain transient gas phase Ti atomic concentration above the substrate. Multi-wavelength pyrometry is applied to measure the surface temperature during deposition. Film growth rates and compositions are obtained by stylus profilometry and Auger electron spectroscopy. Relationships between the growth rate and TiCl4, H2, and N2 partial pressures are established, from which the rate-controlling reactions and activation energy are obtained.
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Chen et al. (1994) studied this question.
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