Thermoelectric power factor enhancement by ionized nanoparticle scattering

We show theoretically that the thermoelectric power factor can be enhanced in degenerate semiconductors when embedded nanoparticles donate carriers to the matrix and replace conventional impurity dopants as scattering centers. Nanoparticle scattering rates calculated by the partial wave method indicate a mobility enhancement over materials with equivalent doping by isolated ionized impurities while the Seebeck coefficient remains nearly intact. We find that the thermoelectric power factor of In0.53Ga0.47As from 300 K to 800 K is enhanced by 15% – 30% by nanoparticles 3–4 nm in diameter.