The effect of doping bismuth telluride with tin, on its electrophysical properties, has been studied. It is shown that the main features in the transport coefficients of Bi 2 Te 3 :Sn can be explained by the existence of resonant Sn states within the valence band. The existence of resonant Sn states was confirmed by codoping Bi 2 Te 3 :Sn with the electroactive impurity I.
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Zhitinskaya et al. (1998) studied this question.
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