Gallium nitride phosphide single crystals having the maximum composition of x∼0.09 were epitaxially deposited on (0001) sapphire substrates. The growth was carried out by the vapor phase reaction of the Ga-Br2-PH3-NH3-N2 system. The above maximum composition was attained at a substrate temperature of 980°C.
No takes yet. Share an insight, caveat, or question.
Osamu Igarashi (1992) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: