A strain-induced ordered phase has been observed recently in the alloy layers of a GeSi/Si strained-layer superlattice in which the ordered unit cell is noncentrosymmetric. Using the bond-charge model of Jha and Bloembergen [Phys. Rev. 171, 891 (1968)], the second-order susceptibility and the linear electro-optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs.
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Friedman et al. (1987) studied this question.
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