The discovery of a memory effect in thiourea1 which we believe to be typical of modulated systems, has allowed to determine, for the first time by a purely thermodynamic method, iso-q lines in the E,T plane of the modulated phase diagram. Using this method, we have studied the commensurate (q=b∗/8)-incommensurate phase transition, at constant electric field E and found that the critical law for the modulation wavevector in the vicinity of the transition temperature T8(E), is: Our result which confirms the E=0 result near commensurability 9 may be explained by the joint effect of a random impurity potential and dipolar interactions2. Using a long stabilization time, we have obtained a strong enhancement of the memory effect, which could be a Defect-Induced-Locked Incommensurate Phase.
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Jamet et al. (1984) studied this question.
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