We have measured the mechanical properties of single-crystal silicon doped with boron (acceptor) impurities. A low-temperature doping-dependent increase in dissipation is observed, accompanied by a period shift. With increasing magnetic field, the dissipation and period shift are eliminated. These results confirm an electronic origin for the dissipation, consistent with the attenuation observed elsewhere in ultrasound in boron-doped silicon.
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Biggar et al. (1997) studied this question.
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