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Visible (670 nm) superluminescent diodes (SLDs) based on AlGaInP/GaInP heterostructures with tapered grounded absorber have been developed. The SLDs have CW output power up to 4 mW at 20°C, spectral bandwidth 12 nm and spectral ripple less than 10%.
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Semenov et al. (1993) studied this question.
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