Thermal dissociation energy of the Si-H complex in n-type GaAs

The thermal dissociation kinetics of the hydrogen-donor complex in n-type GaAs:Si were determined from bias-temperature anneals on hydrogenated Schottky-barrier diodes. The anneal kinetics are approximately first order and yield a thermal dissociation energy for the Si-H complex of 1.2±0.1 eV. Depth redistribution of the Si-H complexes both within the depletion layer of biased diodes and in the field-free region of unbiased diodes suggests that hydrogen in n-type GaAs can migrate as a negatively charged species.