It is shown by Auger electron spectroscopy analysis that the ArF excimer laser photolytic process of phosphine (PH3) gas is capable of removing native oxide and simultaneously depositing amorphous P film on an InP surface. The barrier height of Au-InP Schottky junctions with a thin P layer is found to increase to 0.73 eV from 0.48 eV in the case of untreated Schottky diodes. An enhancement of the barrier height is attributed to a metal-insulator-semiconductor (MIS) Schottky structure. In addition, it is demonstrated that the present procedure is suitable for hydrogenation of InP surfaces without surface degradation due to P dissociation.
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Sugino et al. (1990) studied this question.
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