Thermal conversion of molecular-beam epitaxially (MBE) grown AlGaAs from semi-insulating to p-type caused by annealing has been studied using Hall-effect and photoluminescence measurements. The presence of C impurities causes thermal conversion of the AlGaAs layers. A key observation is that residual C impurities can be greatly reduced by increasing growth temperature. Thermodynamic evaluation of adsorption kinetics suggests that C incorporation during AlGaAs MBE is chemisorptive. The effects of hydrogenation in MBE AlGaAs have also been studied and indicate that thermally activated C acceptors and nonradiative recombination centers can be passivated with this treatment.
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Adachi et al. (1988) studied this question.
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