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August 1, 1998Journal of The Electrochemical Society

Mechanism of Amorphous Silica Film Formation from Tetraethoxysilane in Atomic Oxygen‐Induced Chemical Vapor Deposition

A. M. Wróbel A. Walkiewicz‐Pietrzykowska Sunil Wickramanayaka Yoshinori Hatanaka

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Abstract

Mechanism of Amorphous Silica Film Formation from Tetraethoxysilane in Atomic Oxygen‐Induced Chemical Vapor Deposition, Wróbel, Aleksander M., Walkiewicz‐Pietrzykowska, Agnieszka, Wickramanayaka, Sunil, Hatanaka, Yoshinori

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Wróbel et al. (1998) studied this question.

synapsesocial.com/papers/6aa01e4a40bc1a697f1df655 https://doi.org/10.1149/1.1838727

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