Effects of a Conducting LaNiO 3 Thick Film as a Buffer Layer of a Pb(Zr,Ti)O 3 Film on Titanium Substrates

A conducting 8‐μm‐thick LaNiO 3 (LNO) film was deposited on a Ti substrate by aerosol deposition for use as a diffusion barrier between a lead zirconate titanate (PZT) and a Ti substrate during postannealing. The deposited 20‐μm‐thick PZT films were annealed at 800°C. The PZT film deposited without LNO was cracked and partially detached from the substrate after postannealing, presumably due to a severe reaction with the Ti substrate, while no significant reactions were observed when the LNO buffer layer was used. The remnant polarization and relative dielectric constant of the 20‐μm‐thick annealed PZT films deposited on the LNO‐buffered Ti substrate were 43 μC/cm 2 and 1010, respectively.