Ta/Cu is a strategic material combination for ultra-large-scale integrated wafer technology. Here we report an unconventional method for the synthesis of a [110]-oriented nanocrystalline α-Ta thin film on freshly prepared Cu(111) templates at <50 °C without any redundant underlayers and post-growth treatments. The crystallite size of the α-Ta-containing thin film is in the range of only 6−8 nm, and the Ta film resistivity is reduced significantly from 186 μΩ cm down to 104 μΩ cm with this novel method.
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Yong et al. (2002) studied this question.
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