Detection of Ultrathin SiC Layers by Infrared Spectroscopy. Simulation and Experiment

Heteroepitaxial growth very often involves intermixing effects at the interface between the two distinct materials. Sometimes even severe chemical reactions can occur which lead to the formation of new chemical phases in the interface region. The formation of SiC, for instance, may occur at the diamond/silicon interface depending on the growth condition. Fourier transform infrared spectroscopy is applied in order to assess the diamond/silicon interface properties and to detect possible SiC formation. Spectra are taken in regular reflection, transmission, and ATR configurations. Quantitative analysis is achieved by comparison of measurement and model calculation. The various measurement configurations used are discussed in terms of sensitivity for interface assessment.