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Majority carrier traps produced in arsenic-doped silicon by 1.5-MeV electron irradiation are characterized by deep level transient spectroscopy. Four traps are observed including a new defect located at Ec−0.30 eV. It is also observed that oxygen plays a vital role in the annealing mechanism of the arsenic-vacancy pair. This defect, with a level at Ec−0.42 eV, has two annealing stages, the first being much faster than the second. Its first annealing stage cannot be explained by another defect superimposed upon the As-V pair.
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A. O. Evwaraye (1976) studied this question.
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