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The temperature change related to silicon film formation in a trichlorosilane-hydrogen system was evaluated by an in situ monitoring method using the langasite crystal microbalance (LCM). First, the time constants for the LCM frequency change due to the surface and gas phase temperature change were determined to be less than two hundred seconds. The continuous LCM frequency decrease appearing two hundred seconds after changing the trichlorosilane gas concentration was assigned to the weight increase by the film formation in a steady state. Based on an evaluation of the difference in the LCM frequency between those with and without the heat change related to the film formation, the surface temperature decrease caused by slightly changing the trichlorosilane concentration was comparable to one degree.
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Miyazaki et al. (2015) studied this question.
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