Half-V/sub CC/ sheath-plate capacitor DRAM cell with self-aligned buried plate wiring

A trench-capacitor DRAM cell called a half-V/sub CC/ sheath-plate capacitor (HSPC) cell has been developed using 0.6- mu m-process technology. It is applicable to DRAMs with capacities of 16 Mb and over. The HSPC cell achieves a storage capacitance of 51 fF in a cell area of 4.2 mu m/sup 2/ and excellent immunity (critical charge Q/sub c/>