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November 21, 2002Applied Physics Letters

Planar GaN n+–p photodetectors formed by Si implantation into p-GaN

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Authors

JSJinn‐Kong SheuNational Cheng Kung UniversityMLM. L. LeeNational Central UniversityLYL. S. YehNational Central University

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Sheu et al. (2002) studied this question.

synapsesocial.com/papers/6aa03d13b77b2b3b88824c65https://doi.org/10.1063/1.1524689
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