The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.
No takes yet. Share an insight, caveat, or question.
Saleh et al. (2001) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: