We have employed M\"ossbauer spectroscopy and low energy H implantation to study the Sb-H complexes in n-type Si. The different M\"ossbauer components were studied as a function of H dose, H-implantation temperature, and annealing temperature. To understand the observed data, it is necessary to introduce, in addition to the well-known SbH complex, an SbHₙ complex (n{≥}2), which provides experimental evidence for the existence of donor-multihydrogen complexes. We show that these complexes are in thermal equilibrium with a larger hydrogen reservoir (H₂*), which governs their thermal stability.
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Liang et al. (1994) studied this question.
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