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Several new infrared absorption bands have been discovered in hydrogen passivated silicon doped with P, As, and Sb. The frequency shift upon substitution of D for H confirms the assignment of these bands to donor-H complexes. Thermal annealing experiments, in which both the absorption due to complexes and to free carriers were measured, confirm that donor passivation is due to complex formation, and yield the stability of the complexes. Our results suggest that H is bonded to Si rather than the donor directly.
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Bergman et al. (1988) studied this question.
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