The topographic structure and density of occupied and unoccupied states of the Si(111)-( 7/8 × 7/8 )Al surface are studied using scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy. Tunneling spectroscopy results are compared with theoretical band structure calculations and previous experimental studies. The results confirm a threefold adatom geometry for 7/8 Al/Si(111) and prefer assignment to the T4 site over the H3. The STM images are interpreted in terms of tunneling through localized electronic states at the surface.
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Hamers et al. (1988) studied this question.
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