Behavioral model of a semiconductor opening switch (SOS)

This paper presents a comprehensive experimental investigation and SPICE-based behavioral model of semiconductor opening switch devices developed using a MOSFET-driven testbed. Measurements of key device parameters, including peak diode current, output voltage, risetime, pulsewidth, and voltage multiplication factor, reveal the dependence of device performance on forward charge levels. These observations form the basis for an empirically derived, piecewise resistance function that captures both the gradual onset and abrupt non-linear increase in resistance during switching. Comparisons between the simulated and experimental waveforms demonstrate the model’s ability to be used as a “drop-in” SPICE component.