The effect of additions of ≤1 mol% Al 2 O 3 on abnormal grain growth in BaTiO 3 sintered for periods of ≤60 min at 1350°C has been studied. Addition of ≤0.2 mol% Al 2 O 3 caused an increase in the nucleation and growth rates of abnormal grains, with further additions causing a decrease. This behavior is explained by interface‐controlled growth. Dopant adsorption reduces both the edge free energy and the step velocity of a grain, causing the nucleation and growth rates of abnormal grains to increase, pass through a maximum, and then decrease with increasing dopant concentration.
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Fisher et al. (2006) studied this question.
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