A MOSFET-Based Model of a Class 2 Nerve Membrane

We have constructed a nerve membrane using MOSFET circuitry, which can be a basic element of an FET-based neural system. Its mechanism of action potentials generation is designed to reproduce that of the Hodgkin-Huxley equations. The responses to singlet, doublet, repetitive pulse, and sustained stimuli are analyzed to show that it exhibits similar properties to the Hodgkin-Huxley equations; namely, 1) excitable dynamics with generation of action potentials, 2) the existence of a chaotic response to periodic stimuli, and 3) Class 2 excitability. It is known that Class 2 excitability is generated by an inverted Hopf bifurcation. We have applied Hopf bifurcation theory to our nerve membrane's system equations and have shown a routine for ascertaining whether a certain parameter set generates an inverted Hopf bifurcation.